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Updated: Apr 15, 2019 18:34 IST

Days after it filed a complaint at the airport police station against Union minister Arun Jaitley over his alleged ‘hate speeches’ and unlawful assembly with RSS leader Indresh Kumar, the Akhil Bharatiya Vidyarthi Parishad (ABVP) — the student wing of BJP — has now dropped the ‘criminal complaint’ it filed against Jaitley at the airport police station.

The spokesman of the ABVP, Rajesh Srivastava confirmed to Hindustan Times that there was a confict between the cell members, who did not agree to drop the criminal complaint against Jaitley. The cell is the unit of the ABVP in the Kota airport.

“There was a conflict between the members,” he said.

Although the cell had filed the complaint against Jaitley at the police station in the early hours of Saturday, the ticket counter at the Kota Airport has closed in the night.

No action has been taken so far.

Jaitley has, however, been asked to respond to the complaint lodged against him.1. Field of the Invention
The present invention relates to an oxide film forming method, and more particularly to a method for forming a non-amorphous insulating film on the surface of a substrate.
2. Description of the Prior Art
During the process of making a semiconductor device, the surface of a silicon wafer (substrate) is etched in order to realize minute wiring patterns (e.g., contact hole) and insulation spacers on the substrate. During the etching, some contaminants, such as polymer substance, are inevitably adhered to the surface of the silicon wafer. It is known that the adhesion of the contaminants causes various problems, such as a decrease of the yield of products.
It has been known to use as the material for the insulation spacers and the like a silicon oxide (SiO.sub.2) film having a high oxygen density and free from contaminants. This is because the oxide film has high resistivity and thus has an excellent insulation property and stable element property. As a method of forming the insulating film having such characteristics, a chemical vapor deposition method is known.
The chemical vapor deposition
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